Package mems switch and method

ABSTRACT

An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

TECHNICAL FIELD

Embodiments described herein generally relate to integrated circuitswitches in microelectronic devices.

BACKGROUND

Microelectronic devices such as IC (integrated circuit) packages includelarge numbers of switches that are needed to perform a variety ofoperations. While transistors offer very small scale switchingcapabilities, in some applications a large loss in signal magnitude isincluded with each additional switch that is added in a signal pathway(insertion loss). Microelectromechanical system (MEMS) structures havebeen used to reduce insertion loss, however MEMS switches include anumber of additional technical challenges. Improved MEMS switches aredesired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an example of an IC package in accordance with someembodiments of the invention.

FIG. 2A is a top view of an example of an electronic device including aswitch in accordance with some embodiments of the invention.

FIG. 2B is a side view of the electronic device from FIG. 2A inaccordance with some embodiments of the invention.

FIG. 3A is a top view of an example of an electronic device includinganother switch in accordance with some embodiments of the invention.

FIG. 3B is a side view of the electronic device from FIG. 3A inaccordance with some embodiments of the invention.

FIG. 4 is a top view of an example of an electronic device includinganother switch in accordance with some embodiments of the invention.

FIG. 5 is a flow diagram of a method in accordance with some embodimentsof the invention.

FIG. 6 is block diagram of an electronic system in accordance with someembodiments of the invention.

DESCRIPTION OF EMBODIMENTS

The following description and the drawings sufficiently illustratespecific embodiments to enable those skilled in the art to practicethem. Other embodiments may incorporate structural, logical, electrical,process, and other changes. Portions and features of some embodimentsmay be included in, or substituted for, those of other embodiments.Embodiments set forth in the claims encompass all available equivalentsof those claims.

FIG. 1 shows a cross-sectional representation of an IC package 100. Inembodiments where the IC die is a processor die, the IC package can betermed a processor assembly. IC package 100 includes an IC die 110mounted in “flip-chip” orientation with its active side facing downwardto couple with an upper surface of a substrate 120. In one example, thesubstrate 120 is formed in situ on the die 110 in a bumpless build uplayer (BBUL) process. In selected examples, the die 110 is encased atleast partially within the substrate 120. In other examples, the die 110is coupled to the substrate 120 through interconnections such as solderballs or bumps. The substrate 120 also shows a number of second levelinterconnections 122 on its opposite surface for mating with additionalpackaging structures such as boards (not shown).

In one example, the substrate 120 is formed in situ on the die bylithographically patterning a number of successive layers of dielectricmaterial and conductors or traces. In one such example, an organicdielectric, such as a polymeric based material may be used. Polymericmaterials include curable polymers that may be deposited and hardenedwith crosslink activation by methods such as chemical activation or INlight activation, etc. Polymeric based materials include compositematerials having a polymer matrix and a dispersed phase,

Die 110 generates its heat from internal structure, including wiringtraces, located near its active side; however, a significant portion ofthe heat is dissipated through its back side 114. Heat that isconcentrated within the die is dissipated to a large surface that is incontact with the die in the form of an integrated heat spreader 130. Athermal interface material 140 is often provided. between the die 110and integrated heat spreader 130, in one embodiment, to furtherdissipate heat from the integrated heat spreader 130, a heat sink 150optionally having fins 152 is coupled to the integrated heat spreader130 via a second layer of thermal interface material. In anotherembodiment, the heat spreader is in the form of a metal plate that isattached (e.g. by welding) to a heat pipe for dissipating the heatgenerated by the die.

FIG. 2A shows an electronic device 200 according to one example. Aconductive trace 210 is shown, with an adjacent trace section 212. Aconductive beam 220 is configured to actuate a switch that eithercouples the conductive trace 210 to the adjacent trace section 212, orselectively isolates the conductive trace 210 from the adjacent tracesection 212. The conductive beam 220 includes a first end 222 and asecond end 224. In the example shown in FIG. 2A, the first end 222 isfixed to the package substrate to form a cantilever switch.

FIG. 2B shows the first end 222 of the conductive beam 220 fixed to theconductive trace 210, and electrically coupled through a via 223. FIG.2B further shows the second end 224 of the conductive beam 220 spaced.apart from the adjacent trace section 212 by a gap 226. In one method ofoperation, the conductive beam 220 is selectively actuated by flexing asa cantilever, bringing the second end 224 of the conductive beam 220closer to the adjacent trace section 212 at an end 214 of the adjacenttrace section 212, in one example, one or more openings 228 are etchedor otherwise formed at a location on the conductive beam 220 to tune aflexing force.

FIGS. 2A and 2B show a magnet 230, for example, a permanent magnet thatis used as one part of a system for selectively actuating flexing of theconductive beam 220. FIG. 2A further shows a first connection 240 andsecond connection 244 for application of a current through the end 224of the conductive beam 220 to create an electromagnetic flexing force onthe conductive beam 220. The first connection 240 and second connection244 are coupled to the conductive beam 220 through tethers 242. In theexample shown in FIGS. 2A and 2B, the conductive beam 220 is selectivelyactuated, using force from both the magnet 230, and electrostatically byapplying an electrostatic charge or DC voltage between the conductivebeam 220 and trace 212.

In one example switching actuation, the conductive beam 220 is flexedusing the electromagnetic force created by the magnet 230 and theapplied current to deflect the second end 224 of the conductive beam 220toward the end 214 of the adjacent trace section 212. In addition to theelectromagnetic force provided by the magnet 230, the end 224 of theconductive beam 220 is pulled down and held in place by an electrostaticcharge that is applied to the conductive beam 220 through the firstconnection 240, second connection 244, and tethers 242.

Because the second end 224 of the conductive beam 220 has been broughtcloser to the end 214 of the adjacent trace section 212 by theelectromagnetic force, a smaller amount of charge is needed to maintainthe second end 224 in a flexed position adjacent to the end 214 of theadjacent trace section 212. Additionally, in one example, the currentfor electromagnetic actuation need only be applied to bring the secondend 224 of the conductive beam 220 closer to the end 214 of the adjacenttrace section 212. After the electrostatic charge is applied to theconductive beam 220 to hold it in place, the current for electromagneticactuation may be turned off to save power.

In one example, the electronic device 200 described is incorporated intoa package portion of an IC package, such as the package 120 shown inFIG. 1. In one example, the package includes polymer dielectricmaterial, and metallic traces to route signals from a semiconductorchip, through the package, and to a circuit board such as a motherboard. In one example, fabrication of the electronic device 200 iseasier and less expensive than fabrication in a semiconductor substrate,such as within the semiconductor chip itself.

In one example, the conductive beam 220 is formed from a portion of ametallic trace within the package. In one example, an amount of packagedielectric is selectively removed from around the conductive beam 220,leaving the second end 224 suspended over the end 214 of the adjacenttrace section 212. In one example, the electronic device 200 is formedduring a bumpless build up layer (BBLT) package formation process. In anexample BBUL process, layers of polymeric dielectric material aredeposited in situ around a surface of a semiconductor chip. Through anumber of successive steps, both the polymeric dielectric layers and anumber of metallic conductor layers are lithographically patterned andetched to form routing traces and vias within the polymeric dielectricmaterial.

Formation of the electronic device 200 as shown in FIGS. 2A and 2B canbe easily accomplished using the lithographic processing techniquesalready being utilized in BBUL processing to form routing structures.Because the processing steps are already being utilized, there isminimal additional fabrication cost associated with formation of theelectronic device 200 within the substrate. Organic dielectric portions202 of the package are shown in FIG. 213. Other portions of the organicpackage dielectric are not shown, in order to more clearly show theelectronic device 200. One of ordinary skill in the art, having thebenefit of the present disclosure, will recognize that examples of theelectronic device 200 may be substantially embedded within an organicpackage dielectric, or other organic dielectric.

In some examples, it can be difficult to make features in BBULprocessing as small as those available in semiconductor processing. Forexample, formation of small gaps such as gap 226 shown in FIG. 2B aredifficult compared to formation of small gaps in semiconductorprocessing. With electrostatic actuation the electrostatic force for agiven voltage is inversely proportional to the square of the gap and asmall gap is required for operation at reasonable low voltages.

Using configurations of electronic devices shown in the presentdisclosure, such as electronic device 200, a larger gap 226 does notpose an operational challenge. As described above, even with a large gap226, the electromagnetic force can be used to deflect the second end.224 of the conductive beam 220, even for a relatively large gap 226.After the second end 224 of the conductive beam 220 is pulled down bythe electromagnetic force, the electrostatic charge provided by thefirst connection 240, second connection 244, and tethers 242 facilitatelow power device operation. In one example, the gap 226 is greater thanapproximately 10 micrometers. In one example, the gap 226 is betweenapproximately 10-15 micrometers.

In addition to forming devices in an organic package, such as BBUL,electronic devices, such as electronic device 200 can be formed in anumber of useful organic based substrates including, hut not limited to,flexible computing devices such as curved screen devices, flexiblewearable devices such as wristbands, etc.

In one example, as shown in FIGS. 2A and 2B, the electronic device 200includes a second layer of dielectric 216 over the end 214 of theadjacent trace section 212. In one example, the second dielectric 216includes silicon nitride. In selected examples, the addition of thesecond dielectric 216 makes the switch a capacitive switch, where theproximity of the second end 224 of the conductive beam 220 to the end214 of the adjacent trace section 212 is detected, in contrast to actualcontact. Although a capacitive switch configuration is shown, theinvention is not so limited.

In one example, an isolation capacitor 211 is included to isolateportions of the conductive beam 220 and to facilitate application of theelectrostatic charge as discussed above. In one example, a first groundline 250 and a second ground line 252 are located on sides of theelectronic device 200 to provide radio frequency impedance control forthe conductive trace 210 and the adjacent trace section 212. Althoughground lines 250, 252 are shown as one example in FIGS. 2A and 2B, theinvention is not so limited.

FIGS. 3A and 3B show another electronic device 300 according to oneexample. A conductive trace 310 is shown, with an adjacent trace section312. A conductive beam 320 is configured to actuate a switch that eithercouples the conductive trace 310 to the adjacent trace section 312, orselectively isolates the conductive trace 310 from the adjacent tracesection 312. The conductive beam 320 includes a first end 322 and asecond end 324. In the example shown in FIG. 3A, the first end 322 isfixed to the package substrate to form a cantilever switch.

FIG. 3B shows the first end 322 of the conductive beam 320 fixed to theconductive trace 310, and electrically coupled through a via 323. FIG.3B further shows the second end 324 of the conductive beam 320 spacedapart from the adjacent trace section 312 by a gap 326. As in theexamples of FIGS. 2A and 2B, in one method of operation, the conductivebeam 320 is selectively actuated by flexing as a cantilever, bringingthe second end 324 of the conductive beam 320 closer to the adjacenttrace section 312 at an end 314 of the adjacent trace section 312. Inone example, one or more openings 328 are etched or otherwise formed ata location on the conductive beam 320 to tune a flexing force.

Similar to the examples of FIGS. 2A and 2B, an electromagnetic forcecreated by a magnet 330 such as a permanent magnet, and an appliedcurrent is used to provide a part of the actuation force. Also shown inFIG. 3A, a first connection 340 and second connection 344 forapplication of said current and also an electrostatic charge or DCvoltage to the conductive beam 320. The first connection 340 and secondconnection 344 are coupled to the conductive beam 320 through tethers342. In the example shown in FIGS. 3A and 3B, the conductive beam 320 isselectively actuated using both the magnetic and the electrostaticsystems, including the permanent magnet 330, first connection 340,second connection 344, and tethers 342.

In one example, the electronic device 300 described is incorporated intoa package portion of an IC package, such as the package 120 shown inFIG. 1. As in the example of electronic device 200 described above,forming the electronic device 300 within an organic dielectric such as apackage can reduce manufacturing costs, and provide design flexibilitysuch as enabling placement of electronic devices 200, 300 in uniqueproducts such as flexible electronics and/or wearable electronics.

In one example, an isolation capacitor 311 is included to isolateportions of the conductive beam 320 and to facilitate application of theelectrostatic charge as discussed above. In one example, as shown inFIGS. 3A and 3B, the electronic device 300 includes a second layer ofdielectric 316 over the end 314 of the adjacent trace section 312. Inone example, the second dielectric 316 includes silicon nitride.Although a capacitive switch configuration is shown, the invention isnot so limited.

The example of FIGS. 3A and 3B further shows a ground plane 350 locatedadjacent to and below components of the electronic device 300 to form amicro strip configuration. In one example, the ground plane 350 providesradio frequency impedance control for the conductive trace 310 and theadjacent trace section 312.

FIG. 4 shows another electronic device 400 according to one example. Acontinuous conductive trace 410-412 carrying an RF signal is shown. Aconductive beam or plate 420 is configured to actuate a switch thateither shorts or does not short the trace 410-412 to ground at RFfrequencies, and is referred to as a shunt switch. In the example shownin FIG. 4, all of the conductive beam 420 moves up and down as providedby tethers 442 to form the shunt switch

Similar to the examples of FIGS. 2A, 2B, 3A, and 3B, an electromagneticforce created by a permanent magnet 430 and an applied current is usedto provide a part of the actuation force. Also shown in FIG. 4, a firstconnection 440 and second connection 444 for application of anelectrostatic charge to the conductive beam 420. The first connection440 and second connection 444 are coupled to the conductive beam 420through tethers 442, in the example shown in FIG. 4, the conductive beam420 is selectively actuated using both the electromagnetic and theelectrostatic systems, including the permanent magnet 430, firstconnection 440, second connection 444, and tethers 442.

In one example, the electronic device 400 described is incorporated intoa package portion of an IC package, such as the package 120 shown inFIG. 1. As in the example of electronic devices 200 and 300 describedabove, forming the electronic device 400 within an organic dielectricsuch as a package can reduce manufacturing costs, and provide designflexibility such as enabling placement of electronic devices 200, 300,400 in unique products such as flexible electronics and/or wearableelectronics,

FIG. 4 further shows adjacent ground lines 450 and 452. In one example,capacitors 411 ensure that a DC actuation voltage can he applied to thatportion of the lines 450 and 452 between capacitors 411 without shortcircuiting to the ground lines 450 and 452. Although the capacitors 411isolate the DC actuation voltage from the ground line 450, and 452, atRF frequencies they appear as a short circuit to the ground lines 450and 452. The actuation lines which are the portion of 450 and 452between the isolation capacitors are shown coupled to the firstconnection 440 and second connection 444 respectively through vias 451and 453. In one example, as shown in FIG. 4, the electronic device 400includes a second layer of dielectric 416 over the continuous conductivetrace 410-412, that carries the RF signal. In one example, the seconddielectric 416 includes silicon nitride. When the conductive beam 420 isactuated and contacts the silicon nitride, a very large capacitanceresults which effectively shorts the continuous RF line 410-412 to theconductive beam 420 at RF frequencies, to ground. Hence the RF signal onthe continuous line 410-412 is short circuited to RF ground. Thisimplementation is referred to a shunt switch which either shorts or doesnot short an RF signal to ground. In the series switches depicted in 200and 300 however, the RF signal is interrupted or not interrupted.Combinations of series and shunt switch are used to provide greaterisolation for the complete RF switch. Although a capacitive switchconfiguration is shown, the invention is not so limited.

The example of FIG. 4 may also include a ground plane located adjacentto and below components of the electronic device 400, similar to theexample of FIGS. 3A, and 3B, to form a micro strip configuration. Asdescribed above, a ground plane provides RF impedance control for thecontinuous conductive trace 410 and 412.

FIG. 5 shows an example method of forming an electronic device accordingto an embodiment of the invention. In operation 502, successive layersare built up to form a substrate. In one example, forming the successivelayers includes lithographically forming metallic traces surrounded by abuilt up dielectric material. In operation 504, a portion of thedielectric material is removed from around a conductive beam within thesubstrate to form a movable beam suspended over an adjacent conductivetrace. Examples of material removal processes include, but are notlimited to, chemical etching, physical/mechanical techniques, or plasmaenhanced or reactive ion etching. Examples of movable beams include, butare not limited to, cantilever beams such as the examples shown in FIGS.2A, 2B, 3A, and 3B, and shunt beams such as the example shown in FIG. 4.

In operation 506, a magnetic component is formed adjacent to an end ofthe movable beam. In operation 508, an electrostatic mechanism is formedthat is configured to provide at least a portion of an actuation forceto move the end of the movable beam adjacent to the conductive traceduring operation. Examples of forming the magnetic component include,but are not limited to embedding a permanent magnet at a beginning of aprocess flow, or attaching a permanent magnet externally at an end ofthe process flow.

As discussed above, in one example the electronic device is formed in apackage substrate, in contrast to within a semiconductor material suchas a semiconductor die. In one example, the substrate includes anorganic dielectric material such as a polymer based dielectric. In oneexample conductive traces, such as copper traces, are also formed withinthe substrate. In one example, as discussed above, the substrate andexamples of electronic devices described above, are formed using a BBULprocess.

An example of an electronic device using electronic devices and switchesas described in the present disclosure is included to show an example ofa higher level device application for the present invention. FIG. 6 is ablock diagram of an electronic device 600 incorporating at least oneMEMS switch and/or method in accordance with at least one embodiment ofthe invention. Electronic device 600 is merely one example of anelectronic system in which embodiments of the present invention can beused. Examples of electronic devices 600 include, but are not limited topersonal computers, tablet computers, mobile telephones, game devices,MP3 or other digital music players, etc. In one example, at least oneMEMS switch and/or method in accordance with at least one embodiment ofthe invention is used in conjunction with an antenna for selecting adesired frequency. MEMS switches are useful in antenna systems becausethey may provide switching capability with very low loss of signal, orinsertion loss, from the switches.

In this example, electronic device 600 comprises a data processingsystem that includes a system bus 602 to couple the various componentsof the system. System bus 602 provides communications links among thevarious components of the electronic device 600 and can be implementedas a single bus, as a combination of busses, or in any other suitablemanner.

An electronic assembly 610 is coupled to system bus 602. The electronicassembly 610 can include any circuit or combination of circuits. In oneembodiment, the electronic assembly 610 includes a processor 612 whichcan be of any type. As used herein, “processor” means any type ofcomputational circuit, such as but not limited to a microprocessor, amicrocontroller, a complex instruction set computing (CISC)microprocessor, a reduced instruction set computing (RISC)microprocessor, a very long instruction word (VLIW) microprocessor, agraphics processor, a digital signal processor (DSP), multiple coreprocessor, or any other type of processor or processing circuit.

Other types of circuits that can be included in electronic assembly 610are a custom circuit, an application-specific integrated circuit (ASIC),or the like, such as, for example, one or more circuits (such as acommunications circuit 614) for use in wireless devices like mobiletelephones, tablet computers, laptop computers, two-way radios, andsimilar electronic systems. The IC can perform any other type offunction.

The electronic device 600 can also include an external memory 620, whichin turn can include one or more memory elements suitable to theparticular application, such as a main memory 622 in the form of randomaccess memory (RAM), one or more hard drives 624, and/or one or moredrives that handle removable media 626 such as compact disks (CD), flashmemory cards, digital video disk (DVD), and the like.

The electronic device 600 can also include a display device 616, one ormore speakers 618, and a keyboard, and/or controller 630, which caninclude a mouse, trackball, touch screen, voice-recognition device, orany other device that permits a system user to input information intoand receive information from the electronic device 600.

To better illustrate the method and apparatuses disclosed herein, a nonlimiting list of embodiments is provided here:

Example 1 includes an electronic device. The electronic device includesa semiconductor chip coupled to a package substrate, and at least oneswitch housed at least partially within the package substrate, theswitch including, a conductive trace, a conductive beam housed within apackage substrate dielectric, the conductive beam having at least oneend that is exposed within the dielectric and is free to move, whereinthe at least one end is spaced apart from a corresponding conductivetrace by a gap, a magnetic component configured to provide at least aportion of an actuation force to move the at least one end, and anelectrostatic mechanism configured to provide at least a portion of theactuation force to move or hold in place the at least one end adjacentto the conductive trace.

Example 2 includes the electronic device of example 1, wherein the gapis between approximately 10-15 micrometers.

Example 3 includes the electronic device of any one of examples 1-2,wherein the package substrate dielectric includes an organic dielectric.

Example 4 includes the electronic device of any one of examples 1-3,further including a second dielectric between the conductive beam andthe corresponding end of the conductive trace to form a capacitiveswitch.

Example 5 includes the electronic device of any one of examples 1-4,wherein the second dielectric includes silicon nitride.

Example 6 includes the electronic device of any one of examples 1-5,wherein the one end of the conductive beam is fixed to the packagesubstrate to form a cantilever switch.

Example 7 includes the electronic device of any one of examples 1-6,wherein both ends of the conductive beam are free to move, forming ashunt switch.

Example 8 includes the electronic device of any one of examples 1-7,further including ground traces adjacent to the conductive trace on thesame package level to form a co-planar waveguide.

Example 9 includes the electronic device of any one of examples 1-8,further including a ground plane beneath the conductive trace in thepackage to form a micro-strip waveguide.

Example 10 includes an electronic system. The electronic system includesa semiconductor chip coupled to a package substrate and at least oneswitch housed at least partially within the package substrate, theswitch including, a conductive trace, a conductive beam housed within apackage substrate dielectric, the conductive beam having at least oneend that is exposed within the dielectric and is free to move, whereinthe at least one end is spaced apart from a corresponding conductivetrace by a gap, a magnetic component configured to provide at least aportion of an actuation force to move the at least one end, anelectrostatic mechanism configured to provide at least a portion of theactuation force to move or hold in place the at least one end adjacentto the conductive trace, and an antenna coupled to the at least oneswitch, wherein the antenna is tunable to different frequencies byactuation of the at least one switch to vary the capacitive and/orinductive loading across the antenna.

Example 11 includes the electronic system of example 10, wherein theelectronic device includes a mobile telephone.

Example 12 includes the electronic system of example 10, wherein theelectronic device includes a tablet computer.

Example 13 includes a method that includes building up successive layersto form a substrate, wherein forming the successive layers includesfabricating a dielectric on top of a base panel, and lithographicallyforming metallic traces surrounded by a built up dielectric material,removing a portion of the dielectric material around a conductive beamwithin the substrate to form a movable beam suspended over an adjacentconductive trace, forming a magnetic component adjacent to an end of themovable beam, the magnetic component configured to provide at least aportion of an actuation force to move the end of the movable beam, andforming an electrostatic mechanism configured to provide at least aportion of the actuation force to move the end of the movable beamadjacent to the conductive trace during operation.

Example 14 includes the method of example 13, wherein removing a portionof the dielectric material around a conductive beam within the substrateto form a movable beam includes removing dielectric material around oneend to form a flexible cantilever,

Example 15 includes the method of any one of examples 13-14, whereinremoving a portion of the dielectric material around a conductive beamwithin the substrate to form a movable beam includes removing dielectricmaterial completely from beneath the conductive beam to form a shuntswitch.

Example 16 includes the method of any one of examples 13-15, whereinbuilding up successive layers to form a substrate includes depositingpolymer based layers.

Example 17 includes the method of any one of examples 13-16, whereinforming metallic traces includes forming metallic copper traces, andwherein removing a portion of the dielectric material around aconductive beam includes removing material around a copper beam andcopper tethers.

Example 18 includes the method of any one of examples 13-17, whereinremoving a portion of the dielectric material includes using chemical orphysical/mechanical or plasma enhanced or reactive ion etching to removea portion of the dielectric material.

Example 19 includes the method of any one of examples 13-18, furthercomprising coupling a semiconductor chip to the substrate.

Example 20 includes the method of any one of examples 13-19, wherein thesubstrate is formed in-situ on the semiconductor chip.

These and other examples and features of the present electronic device,and related methods will be set forth in part in the above detaileddescription. This overview is intended to provide non-limiting examplesof the present subject matter—it is not intended to provide an exclusiveor exhaustive explanation.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which theinvention can be practiced. These embodiments are also referred toherein as “examples.” Such examples can include elements in addition tothose shown or described. However, the present inventors alsocontemplate examples in which only those elements shown or described areprovided. Moreover, the present inventors also contemplate examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” includes “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In this document, the terms “including” and “inwhich” are used as the plain-English equivalents of the respective terms“comprising” and “wherein.” Also, in the following claims, the terms“including” and “comprising” are open-ended, that is, a system, device,article, composition, formulation, or process that includes elements inaddition to those listed after such a term in a claim are still deemedto fall within the scope of that claim. Moreover, in the followingclaims, the terms “first,” “second,” and “third,” etc. are used merelyas labels, and are not intended to impose numerical requirements ontheir objects.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) may be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. The Abstract is provided to complywith 37 C.F.R. § 1.72(b), to allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features may be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter maylie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment, and it is contemplated that such embodiments can be combinedwith each other in various combinations or permutations. The scope ofthe invention should be determined with reference to the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

1. An electronic device, comprising: a semiconductor chip coupled to apackage substrate; at least one switch housed at least partially withinthe package substrate, the switch including; a conductive trace; aconductive beam housed within a package substrate dielectric, theconductive beam having at least one end that is exposed within thedielectric and is free to move; wherein the at least one end is spacedapart from a corresponding conductive trace by a gap; a magneticcomponent configured to provide at least a portion of an actuation forceto move the at least one end; and an electrostatic mechanism configuredto provide at least a portion of the actuation force to move or hold inplace the at least one end adjacent to the conductive trace.
 2. Theelectronic device of claim 1, wherein the gap is between approximately10-15 micrometers.
 3. The electronic device of claim 1, wherein thepackage substrate dielectric includes an organic dielectric.
 4. Theelectronic device of claim 1, further including a second dielectricbetween the conductive beam and the conductive trace to form acapacitive switch.
 5. The electronic device of claim 4, wherein hesecond dielectric includes silicon nitride.
 6. The electronic device ofclaim 1, wherein the one end of the conductive beam is fixed to thepackage substrate to form a cantilever switch.
 7. The electronic deviceof claim 1, wherein both ends of the conductive beam are free to move,forming a shunt switch.
 8. The electronic device of claim 1, furtherincluding ground traces adjacent to the conductive trace on the samepackage level to form a co-planar waveguide.
 9. The electronic device ofclaim 1, further including a ground plane beneath the conductive tracein the package to form a micro-strip waveguide.
 10. An electronicsystem, comprising: a semiconductor chip coupled to a package substrate;at least one switch housed at least partially within the packagesubstrate, the switch including; a conductive trace; a conductive beamhoused within a package substrate dielectric, the conductive beam havingat least one end that is exposed within the dielectric and is free tomove; wherein the at least one end is spaced apart from a correspondingconductive trace by a gap; a magnetic component configured to provide atleast a portion of an actuation force to move the at least one end; andan electrostatic mechanism configured to provide at least a portion ofthe actuation force to move or hold in place the at least one endadjacent to the conductive trace; and an antenna coupled to the at leastone switch, wherein the antenna is tunable to different frequencies byactuation of the at least one switch to vary the capacitive and/orinductive loading across the antenna.
 11. The electronic system of claim10, wherein the electronic device includes a mobile telephone.
 12. Theelectronic system of claim 10, wherein the electronic device includes atablet computer.
 13. A method, comprising: building up successive layersto form a substrate, wherein forming the successive layers includesfabricating a dielectric on top of a base panel, and lithographicallyforming metallic traces surrounded by a built up dielectric material;removing a portion of the dielectric material around a conductive beamwithin the substrate to form a movable beam suspended over an adjacentconductive trace; forming a magnetic component adjacent to an end of themovable beam, the magnetic component configured to provide at least aportion of an actuation force to move the end of the movable beam; andforming an electrostatic mechanism configured to provide at least aportion of the actuation force to move or hold in place the end of themovable beam adjacent to the conductive trace during operation.
 14. Themethod of claim 13, wherein removing a portion of the dielectricmaterial around a conductive beam within the substrate to form a movablebeam includes removing dielectric material around one end to form aflexible cantilever.
 15. The method of claim 13, wherein removing aportion of the dielectric material around a conductive beam within thesubstrate to form a movable beam includes removing dielectric materialcompletely from beneath the conductive beam to form a shunt switch. 16.The method of claim 13, wherein building up successive layers to form asubstrate includes depositing polymer based layers.
 17. The method ofclaim 13, wherein forming metallic traces includes forming metalliccopper traces, and wherein removing a portion of the dielectric materialaround a conductive beam includes removing material around a copper beamand copper tethers.
 18. The method of claim 13, wherein removing aportion of the dielectric material includes using chemical orphysical/mechanical or plasma enhanced or reactive ion etching to removea portion of the dielectric material.
 19. The method of claim 13,further comprising coupling a semiconductor chip to the substrate. 20.The method of claim 19, wherein the substrate is formed in-situ on thesemiconductor chip.